document number: 89369 for technical questions within your region, please contact one of the following: www.vishay.com revision: 27-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 trench mos barrier schottky rectifier for pv solar cell bypass protection ultra low v f = 0.30 v at i f = 5.0 a VFT3045CBP vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder bath tempe rature 275 c ma x. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in solar cell junction box as a bypass diode for protection, using dc forward current without reverse bias. mechanical data case: ito-220ab molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum notes (1) with heatsink (2) meets the requirements of iec 61 215 ed. 2 bypass di ode thermal test primary characteristics i f(av) 2 x 15 a v rrm 45 v i fsm 200 a v f at i f = 15 a 0.39 v t op max. 150 c pin 1 pin 2 pin 3 tmbs ? ito-220ab 1 2 3 VFT3045CBP maximum ratings (t a = 25 c unless otherwise noted) parameter symbol VFT3045CBP unit maximum repetitive pe ak reverse voltage v rrm 45 v maximum average forward rectified current (fig. 1) per device i f(av) (1) 30 a per diode 15 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on ra ted load per diode i fsm 200 a isolation voltage from term al to heatsink, t = 1 min v ac 1500 v operating junction and storage temperature range t op , t stg - 40 to + 150 c junction temperature in dc forward current without reverse bias, t 1 h t j (2) 200 c
www.vishay.com for technical questions wi thin your region, please contact one of the following: document number: 89369 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 27-oct-10 VFT3045CBP vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.42 - v i f = 7.5 a 0.44 - i f = 15 a 0.49 0.57 i f = 5 a t a = 125 c 0.30 - i f = 7.5 a 0.33 - i f = 15 a 0.39 0.48 reverse current per diode v r = 45 v t a = 25 c i r (2) - 2000 a t a = 125 c 17 50 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol VFT3045CBP unit typical thermal resistance per diode r jc 6.0 c/w per device 4.0 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode ito-220ab VFT3045CBP-m3/4w 1.76 4w 50/tube tube case temperat u re (c) a v erage for w ard rectified c u rrent (a) 35 30 25 20 5 0 0 75 100 125 150 175 15 10 50 25 0 1 6 7 8 9 02 6 10 161 8 a v erage for w ard c u rrent (a) a v erage po w er loss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 12 d = t p /t t p t 3 4 5 2 14 4 8
document number: 89369 for technical questions within your region, please contact one of the following: www.vishay.com revision: 27-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 VFT3045CBP vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) instantaneo u s for w ard voltage (v) 0 0.2 0.4 0.7 100 10 1 0.1 t a = 150 c t a = 125 c t a = 100 c t a = 25 c 0.6 instantaneo u s for w ard c u rrent (a) 0.1 0.3 0.5 20 40 60 8 0 100 1 0.1 0.01 0.001 100 10 percent of rated peak re v erse voltage (%) instantaneo u s re v erse c u rrent (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 100 10 000 100 000 0.1 1 10 100 re v erse voltage (v) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 1000 10 0.1 0.01 0.1 1 10 100 t - p u lse d u ration (s) j u nction to case 1 transient thermal impedance (c/w) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.3 8 ) 0.105 (2.67) 0.095 (2.41) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 )
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